Strain mapping at nanometer resolution using advanced nano-beam electron diffraction

Autor(en)

V. B. Ozdol, C. Gammer, X. G. Jin, P. Ercius, C. Ophus, J. Ciston, A. M. Minor

Abstrakt

We report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.

Organisation(en)

Physik Nanostrukturierter Materialien

Externe Organisation(en)

Lawrence Berkeley National Laboratory, Nagoya University, University of California, Berkeley

Journal

Applied Physics Letters

Band

106

Anzahl der Seiten

5

ISSN

0003-6951

DOI

https://doi.org/10.1063/1.4922994

Publikationsdatum

06-2015

Peer-reviewed

Ja

ÖFOS 2012

103018 Materialphysik

Schlagwörter

ASJC Scopus Sachgebiete

Physics and Astronomy (miscellaneous)

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/ef4cc56c-dfe3-496e-8803-1477812b4857