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Iron as a source of efficient Shockley-Read-Hall recombination in GaN

Autor(en)
Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Manuel Engel, Martijn Marsman, Georg Kresse, Saulius Marcinkevicius, Audrius Alkauskas, Chris G. Van de Walle
Abstrakt

Transition metal impurities are known to adversely affect the efficiency of electronic and optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley-Read-Hall centers. Iron impurities in GaN do not follow this pattern: their defect level is close to the conduction band and hence far from midgap. Using hybrid functional first-principles calculations, we uncover the electronic properties of Fe and we demonstrate that its high efficiency as a nonradiative center is due to a recombination cycle involving excited states. Unintentional incorporation of iron impurities at modest concentrations (10(15) cm(-3)) leads to nanosecond nonradiative recombination lifetimes, which can be detrimental for the efficiency of electronic and optoelectronic devices.

Organisation(en)
Computergestützte Materialphysik
Externe Organisation(en)
University of California, Santa Barbara, Rutgers University, KTH - Royal Institute of Technology, Center for Physical Sciences and Technology, Universität Wien
Journal
Applied Physics Letters
Band
109
Anzahl der Seiten
4
ISSN
0003-6951
DOI
https://doi.org/10.1063/1.4964831
Publikationsdatum
10-2016
Peer-reviewed
Ja
ÖFOS 2012
103025 Quantenmechanik, 103036 Theoretische Physik, 103015 Kondensierte Materie, 103009 Festkörperphysik
Schlagwörter
ASJC Scopus Sachgebiete
Physics and Astronomy (miscellaneous)
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/e6a402ae-e481-46ee-aff9-96917a61df3b