Graphene-Supported Atom-Sized Magnets for Data Storage

Autor(en)

Jan Navrátil, Rostislav Langer, Michal Otyepka, Toma Susi, Piotr Błoński

Abstrakt

Doping the graphene lattice with transition metal (TM) atoms has been identified as an effective strategy for obtaining high magnetic anisotropy energy (MAE), preventing thermally induced reorientation of magnetic moments between the easy and hard magnetization axes. Lattice imperfections such as atomic vacancies can anchor TM atoms or their clusters, preventing them from diffusing and agglomerating on the surface, ultimately allowing high MAEs of 170 meV for an OsPd dimer bound to a single nitrogen-decorated vacancy (NSV) in the graphene lattice. Importantly, the lighter TM dimers, FeMn bound to two separate double-vacancy (DV) defects, can also exhibit a significant MAE of 120 meV when interacting with each other through the graphene lattice. The presence of Mn impurities associated with DV defects in the graphene lattice has been confirmed experimentally and can form anchors for the formation of FeMn dimers. For practical applications of graphene-supported magnetic dimers, the carbon sheet must be deposited on a solid support. A properly selected substrate can, to a large extent, allow for the preservation of a large MAE of dimers.

Organisation(en)

Physik Nanostrukturierter Materialien

Externe Organisation(en)

Olmützer Palacky-Universität, Czech Academy of Sciences, Technical University of Ostrava

Anzahl der Seiten

2

DOI

https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228258

Publikationsdatum

09-2023

Peer-reviewed

Ja

ÖFOS 2012

103017 Magnetismus

Schlagwörter

ASJC Scopus Sachgebiete

Energy Engineering and Power Technology, Electrical and Electronic Engineering, Mechanical Engineering, Electronic, Optical and Magnetic Materials, Instrumentation

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/df6fabfe-62c4-4040-9653-192838323237