Die u:cris Detailansicht:
Dopant-configuration controlled carrier scattering in graphene
- Autor(en)
- Benoy Anand, Mehmet Karakaya, Gyan Prakash, S. Siva Sankara Sai, Reji Philip, Paola Ayala, Anurag Srivastava, Ajay K. Sood, Apparao M. Rao, Ramakrishna Podila
- Abstrakt
Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).
- Organisation(en)
- Elektronische Materialeigenschaften
- Externe Organisation(en)
- Sri Sathya Sai Institute of Higher Learning, Clemson University, Indian Institute of Science, Raman Research Institute, Indian Institute of Information Technology and Management, Gwalior, Yachay Tech University
- Journal
- RSC Advances
- Band
- 5
- Seiten
- 59556-59563
- Anzahl der Seiten
- 8
- ISSN
- 2046-2069
- DOI
- https://doi.org/10.1039/c5ra05338b
- Publikationsdatum
- 2015
- Peer-reviewed
- Ja
- ÖFOS 2012
- 103018 Materialphysik
- Schlagwörter
- ASJC Scopus Sachgebiete
- Allgemeine chemische Verfahrenstechnik, Allgemeine Chemie
- Link zum Portal
- https://ucrisportal.univie.ac.at/de/publications/d78cc941-616e-40ea-a8e7-69e3692e3d9c