Dopant-configuration controlled carrier scattering in graphene

Autor(en)

Benoy Anand, Mehmet Karakaya, Gyan Prakash, S. Siva Sankara Sai, Reji Philip, Paola Ayala, Anurag Srivastava, Ajay K. Sood, Apparao M. Rao, Ramakrishna Podila

Abstrakt

Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Sri Sathya Sai Institute of Higher Learning, Clemson University, Indian Institute of Science, Raman Research Institute, Indian Institute of Information Technology and Management, Gwalior, Yachay Tech University

Journal

RSC Advances

Band

5

Seiten

59556-59563

Anzahl der Seiten

8

ISSN

2046-2069

DOI

https://doi.org/10.1039/c5ra05338b

Publikationsdatum

2015

Peer-reviewed

Ja

ÖFOS 2012

103018 Materialphysik

Schlagwörter

ASJC Scopus Sachgebiete

Allgemeine chemische Verfahrenstechnik, Allgemeine Chemie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/d78cc941-616e-40ea-a8e7-69e3692e3d9c