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Dopant-configuration controlled carrier scattering in graphene

Autor(en)
Benoy Anand, Mehmet Karakaya, Gyan Prakash, S. Siva Sankara Sai, Reji Philip, Paola Ayala, Anurag Srivastava, Ajay K. Sood, Apparao M. Rao, Ramakrishna Podila
Abstrakt

Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).

Organisation(en)
Elektronische Materialeigenschaften
Externe Organisation(en)
Sri Sathya Sai Institute of Higher Learning, Clemson University, Indian Institute of Science, Raman Research Institute, Indian Institute of Information Technology and Management, Gwalior, Yachay Tech University
Journal
RSC Advances
Band
5
Seiten
59556-59563
Anzahl der Seiten
8
ISSN
2046-2069
DOI
https://doi.org/10.1039/c5ra05338b
Publikationsdatum
2015
Peer-reviewed
Ja
ÖFOS 2012
103018 Materialphysik
Schlagwörter
ASJC Scopus Sachgebiete
Allgemeine chemische Verfahrenstechnik, Allgemeine Chemie
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/d78cc941-616e-40ea-a8e7-69e3692e3d9c