Vanadium in silicon carbide: telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

Autor(en)

Thomas Astner, Philipp Koller, Carmem M. Gilardoni, Joop Hendriks, Nguyen Tien Son, Ivan G. Ivanov, Jawad Ul Hassan, Caspar H. van der Wal, Michael Trupke

Abstrakt

Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25 s at 100 mK, and of order 1 s at 1.3 K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems’ hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.

Organisation(en)

Quantenoptik, Quantennanophysik und Quanteninformation

Externe Organisation(en)

Österreichische Akademie der Wissenschaften (ÖAW), University of Groningen, Linköping University

Journal

Quantum Science and Technology

Band

9

Anzahl der Seiten

9

ISSN

2058-9565

DOI

https://doi.org/10.48550/arXiv.2206.06240

Publikationsdatum

07-2024

Peer-reviewed

Ja

ÖFOS 2012

103021 Optik, 102040 Quantencomputing

Schlagwörter

ASJC Scopus Sachgebiete

Atomic and Molecular Physics, and Optics, Materials Science (miscellaneous), Physics and Astronomy (miscellaneous), Electrical and Electronic Engineering

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/d09eb604-7f08-4024-8a1e-6c4235342033