Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium

Autor(en)

Garrett Cole, Yu Bai, Markus Aspelmeyer, Eugene A. Fitzgerald

Abstrakt

We outline a facile fabrication technique for the realization of free-standing AlxGa1-xAs heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF2) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of similar to 10(6).

Organisation(en)

Quantenoptik, Quantennanophysik und Quanteninformation

Externe Organisation(en)

Massachusetts Institute of Technology

Journal

Applied Physics Letters

Band

96

Anzahl der Seiten

4

ISSN

0003-6951

DOI

https://doi.org/10.1063/1.3455104

Publikationsdatum

2010

Peer-reviewed

Ja

ÖFOS 2012

103026 Quantenoptik

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/cc45e557-0a52-48ee-923a-9b9039b905db