Die u:cris Detailansicht:
High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature
- Autor(en)
- Chanyoung Yim, Kangho Lee, Niall McEvoy, Maria O'Brien, Sarah Riazimehr, Nina C. Berner, Conor P. Cullen, Jani Kotakoski, Jannik C. Meyer, Max C. Lemme, Georg S. Duesberg
- Abstrakt
Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe
2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe
2 on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe
2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.
- Organisation(en)
- Physik Nanostrukturierter Materialien
- Externe Organisation(en)
- University of Dublin, Universität Siegen
- Journal
- ACS Nano
- Band
- 10
- Seiten
- 9550-9558
- Anzahl der Seiten
- 9
- ISSN
- 1936-0851
- Publikationsdatum
- 10-2016
- Peer-reviewed
- Ja
- ÖFOS 2012
- 103018 Materialphysik
- Schlagwörter
- ASJC Scopus Sachgebiete
- Allgemeiner Maschinenbau, Allgemeine Physik und Astronomie, Allgemeine Materialwissenschaften
- Sustainable Development Goals
- SDG 7 – Bezahlbare und saubere Energie
- Link zum Portal
- https://ucrisportal.univie.ac.at/de/publications/c6ddd856-dae3-4aa0-a5d2-edf69c40b323