High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

Autor(en)

Chanyoung Yim, Kangho Lee, Niall McEvoy, Maria O'Brien, Sarah Riazimehr, Nina C. Berner, Conor P. Cullen, Jani Kotakoski, Jannik C. Meyer, Max C. Lemme, Georg S. Duesberg

Abstrakt

Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe

₂), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe

₂ on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe

₂ as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

Organisation(en)

Physik Nanostrukturierter Materialien

Externe Organisation(en)

University of Dublin, Universität Siegen

Journal

ACS Nano

Band

10

Seiten

9550-9558

Anzahl der Seiten

9

ISSN

1936-0851

Publikationsdatum

10-2016

Peer-reviewed

Ja

ÖFOS 2012

103018 Materialphysik

Schlagwörter

ASJC Scopus Sachgebiete

Allgemeiner Maschinenbau, Allgemeine Physik und Astronomie, Allgemeine Materialwissenschaften

Sustainable Development Goals

SDG 7 – Bezahlbare und saubere Energie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/c6ddd856-dae3-4aa0-a5d2-edf69c40b323