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High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature

Autor(en)
Chanyoung Yim, Kangho Lee, Niall McEvoy, Maria O'Brien, Sarah Riazimehr, Nina C. Berner, Conor P. Cullen, Jani Kotakoski, Jannik C. Meyer, Max C. Lemme, Georg S. Duesberg
Abstrakt

Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe

2), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe

2 on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe

2 as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.

Organisation(en)
Physik Nanostrukturierter Materialien
Externe Organisation(en)
University of Dublin, Universität Siegen
Journal
ACS Nano
Band
10
Seiten
9550-9558
Anzahl der Seiten
9
ISSN
1936-0851
Publikationsdatum
10-2016
Peer-reviewed
Ja
ÖFOS 2012
103018 Materialphysik
Schlagwörter
ASJC Scopus Sachgebiete
Allgemeiner Maschinenbau, Allgemeine Physik und Astronomie, Allgemeine Materialwissenschaften
Sustainable Development Goals
SDG 7 – Bezahlbare und saubere Energie
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/c6ddd856-dae3-4aa0-a5d2-edf69c40b323