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Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films

Autor(en)
Bernhard C, Bayer, Sabina Caneva, Timothy J. Pennycook, Jani Kotakoski, Clemens Mangler, Stephan Hofmann, Jannik C. Meyer
Abstrakt

We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping hBN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes.

Organisation(en)
Physik Nanostrukturierter Materialien
Externe Organisation(en)
University of Cambridge
Journal
ACS Nano
Band
11
Seiten
4521-4527
Anzahl der Seiten
7
ISSN
1936-0851
DOI
https://doi.org/10.1021/acsnano.6b08315
Publikationsdatum
05-2017
Peer-reviewed
Ja
ÖFOS 2012
103042 Elektronenmikroskopie, 103018 Materialphysik
Schlagwörter
ASJC Scopus Sachgebiete
Allgemeiner Maschinenbau, Allgemeine Physik und Astronomie, Allgemeine Materialwissenschaften
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/c22ff788-1701-45b3-86f8-915a1a16c5dd