Nuclear spin quantum memory in silicon carbide

Autor(en)

Benedikt Tissot, Michael Trupke, Philipp Koller, Thomas Astner, Guido Burkard

Abstrakt

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g., vanadium, emit in one of the telecom bands, but the large ground-state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.

Organisation(en)

Quantenoptik, Quantennanophysik und Quanteninformation

Externe Organisation(en)

Universität Konstanz, Österreichische Akademie der Wissenschaften (ÖAW)

Journal

Physical Review Research

Band

4

Anzahl der Seiten

12

ISSN

2643-1564

DOI

https://doi.org/10.1103/PhysRevResearch.4.033107

Publikationsdatum

08-2022

Peer-reviewed

Ja

ÖFOS 2012

103015 Kondensierte Materie, 103025 Quantenmechanik

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/b756a8d0-8f2f-4323-a5dd-49f2841376d8