Silicon-Carbon Bond Inversions Driven by 60-keV Electrons in Graphene

Autor(en)

Toma Susi, Jani Kotakoski, Demie Kepaptsoglou, Clemens Mangler, Tracy C. Lovejoy, Ondrej L. Krivanek, Recep Zan, Ursel Bangert, Paola Ayala, Jannik C. Meyer, Quentin Ramasse

Abstrakt

We demonstrate that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of nondestructive and atomically precise structural modification and detection for two-dimensional materials.

Organisation(en)

Elektronische Materialeigenschaften, Physik Nanostrukturierter Materialien

Externe Organisation(en)

University of Helsinki, SuperSTEM Daresbury, Nion Co, University of Manchester, Niğde University, University of Limerick

Journal

Physical Review Letters

Band

113

Anzahl der Seiten

5

ISSN

0031-9007

Publikationsdatum

09-2014

Peer-reviewed

Ja

ÖFOS 2012

210006 Nanotechnologie, 103018 Materialphysik, 103008 Experimentalphysik, 103009 Festkörperphysik

Schlagwörter

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/ac969940-cb70-43f8-984e-35d8d2dfd07f