Growth of ultra-flat ultra-thin alkali antimonide photocathode films

Autor(en)

W. G. Stam, M. Gaowei, E. M. Echeverria, Kenneth Evans-Lutterodt, Jean Jordan-Sweet, T. Juffmann, S. Karkare, J. Maxson, S. J. van der Molen, C. Pennington, P. Saha, J. Smedley, R. M. Tromp

Abstrakt

Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H-SiC (Gr/4H-SiC), 3C-SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (

Organisation(en)

Quantenoptik, Quantennanophysik und Quanteninformation, Department für Strukturbiologie und Computational Biology

Externe Organisation(en)

Leiden University, Brookhaven National Laboratory, Cornell University, IBM T. J. Watson Research Center, Max F. Perutz Laboratories GmbH (MFPL), Arizona State University, SLAC Natl Accelerator Lab

Journal

APL Materials

Band

12

Anzahl der Seiten

8

ISSN

2166-532X

DOI

https://doi.org/10.1063/5.0213461

Publikationsdatum

06-2024

Peer-reviewed

Ja

ÖFOS 2012

103021 Optik, 103018 Materialphysik

ASJC Scopus Sachgebiete

Allgemeine Materialwissenschaften, Allgemeiner Maschinenbau

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/85a8d400-8271-4d57-9233-ea776c845812