Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors

Autor(en)

J. Provine, Peter Schindler, Jan Torgersen, Hyo Jin Kim, Hans-Peter Karnthaler, Fritz B. Prinz

Abstrakt

Tetrakisdimethylamido (TDMA) based precursors are commonly used to deposit metal oxides such as TiO2, ZrO2, and HfO2 by means of chemical vapor deposition and atomic layer deposition (ALD). Both thermal and plasma enhanced ALD (PEALD) have been demonstrated with TDMA-metal precursors. While the reactions of TDMA-type precursors with water and oxygen plasma have been studied in the past, their reactivity with pure O-2 has been overlooked. This paper reports on experimental evaluation of the reaction of molecular oxygen (O-2) and several metal organic precursors based on TDMA ligands. The effect of O-2 exposure duration and substrate temperature on deposition and film morphology is evaluated and compared to thermal reactions with H2O and PEALD with O-2 plasma.

Organisation(en)

Physik Nanostrukturierter Materialien

Externe Organisation(en)

Stanford University

Journal

Journal of vacuum science & technology a

Band

34

Anzahl der Seiten

5

ISSN

0734-2101

DOI

https://doi.org/10.1116/1.4937991

Publikationsdatum

01-2016

Peer-reviewed

Ja

ÖFOS 2012

103018 Materialphysik

Schlagwörter

ASJC Scopus Sachgebiete

Condensed Matter Physics, Surfaces, Coatings and Films, Surfaces and Interfaces

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/6f1dc401-aa86-41ce-809d-e36c87998bb7