Graphene Epitaxy by Chemical Vapor Deposition on SiC

Autor(en)

W. Strupinski, K. Grodecki, A. Wysmolek, R. Stepniewski, T. Szkopek, P. E. Gaskell, Alexander Grüneis, Danny Haberer, R. Bozek, Jerzy Krupka, J. M. Baranowski

Abstrakt

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well developed epitaxial graphene growth by Si sublimation that has been known for decades.(1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of similar to 1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Institute of Electronic MaterialsTechnology, University of Warsaw, McGill University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Warsaw University of Technology

Journal

Nano Letters: a journal dedicated to nanoscience and nanotechnology

Band

11

Seiten

1786-1791

Anzahl der Seiten

6

ISSN

1530-6984

DOI

https://doi.org/10.1021/nl200390e

Publikationsdatum

2011

Peer-reviewed

Ja

ÖFOS 2012

103015 Kondensierte Materie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/68d87f6f-bb5c-4c94-bf5a-bba5d3cdd085