Die u:cris Detailansicht:
Wavelength-resolved study of the photodoping effect in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>x</sub>
- Autor(en)
- W. Markowitsch, C. Stockinger, W. Lang, W. Kula, R. Sobolewski
- Abstrakt
The Hall effect and the resistivity of oxygen-depleted YBa/sub 2/Cu/sub 3/O/sub x/ were measured in-situ during photoexcitation at various photon energies between 1.1 and 2.1 eV, and at several temperatures between 70 K and 290 K. At low temperatures, the photodoping efficiency shows two distinct maxima at about 1.5 eV and 1.85 eV, respectively. The low energy peak dominates the photodoping at 70 K, but rapidly decreases at higher temperatures. The Hall effect measurements indicate that the 1.5-eV peak arises mainly from the enhancement of the carrier mobility. In contrast, the 1.85-eV results from the enhancement of the carrier density.
- Organisation(en)
- Elektronische Materialeigenschaften
- Journal
- Institute of Physics: Conference Series
- Band
- 158
- Seiten
- 117-120
- Anzahl der Seiten
- 4
- ISSN
- 0951-3248
- Publikationsdatum
- 1997
- Peer-reviewed
- Ja
- ÖFOS 2012
- 503013 Fachdidaktik Naturwissenschaften, 103018 Materialphysik
- Schlagwörter
- Link zum Portal
- https://ucrisportal.univie.ac.at/de/publications/5d0c2b45-1284-4b73-8ec7-891da6c250cc