Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance

Autor(en)

Tomasz Andrearczyk, Khrystyna Levchenko, Janusz Sadowski, Katarzyna Gas, Andrei Avdonin, Jerzy Wróbel, Tadeusz Figielski, Maciej Sawicki, Tadeusz Wosinski

Abstrakt

The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties is studied in very thin layers of quaternary (Ga,Mn)(Bi,As) compound grown on a GaAs substrate under a compressive misfit strain. An addition of a small atomic fraction of 1% Bi atoms, substituting As atoms in the layer, predominantly enhances the spin–orbit coupling strength in its valence band. The presence of bismuth results in a small decrease in the ferromagnetic Curie temperature and a distinct increase in the coercive fields. On the other hand, the Bi incorporation into the layer strongly enhances the magnitude of negative magnetoresistance without affecting the hole concentration in the layer. The negative magnetoresistance is interpreted in terms of the suppression of weak localization in a magnetic field. Application of the weak-localization theory for two-dimensional ferromagnets by Dugaev et al. to the experimental magnetoresistance results indicates that the decrease in spin–orbit scattering length accounts for the enhanced magnetoresistance in (Ga,Mn)(Bi,As).

Organisation(en)

Nanomagnetismus und Magnonik

Externe Organisation(en)

Polish Academy of Sciences (PAS), Linnaeus University

Journal

Materials

Band

16

Anzahl der Seiten

12

ISSN

1996-1944

DOI

https://doi.org/10.3390/ma16020788

Publikationsdatum

01-2023

Peer-reviewed

Ja

ÖFOS 2012

103011 Halbleiterphysik

Schlagwörter

ASJC Scopus Sachgebiete

Allgemeine Materialwissenschaften, Condensed Matter Physics

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/5b7c2819-f05f-4720-adc6-57f860b3dade