The influence of γ-irradiation on nitrogen configuration in nitrogen-doped single-walled carbon nanotubes

Autor(en)

Theerapol Thurakitseree, Christian Kramberger, Narong Chanlek, Ratchadaporn Supruangnet, Anurat Wisitsorraat, Hideki Nakajima, Shigeo Maruyama

Abstrakt

Electronic properties of nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs) depend on carbon and nitrogen configuration. Depending on the intrinsic nitrogen structure, it can be either intrinsic p- or n- doping. Here, we have investigated the influence of soft gamma (γ)-irradiation on the nitrogen configuration in vertically aligned N-doped SWCNT arrays. As the irradiation dose increased, pyridinic and graphitic nitrogens become more predominant. In general, the presence of holes refer to p-doping. However, XPS spectra show n-doping features, whereas the slight downshift in the G line position in Raman spectra is from compensating the ambient p-doping. The local transition of π* nitrogen was also revealed by X-ray absorption spectroscopy.

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Maejo University, Synchrotron Light Research Institute, National Electronics and Computer Technology Center (NECTEC), University of Tokyo, National Institute of Advanced Industrial Science and Technology (AIST)

Journal

Diamond and Related Materials

Band

101

Anzahl der Seiten

5

ISSN

0925-9635

DOI

https://doi.org/10.1016/j.diamond.2019.107569

Publikationsdatum

01-2020

Peer-reviewed

Ja

ÖFOS 2012

103018 Materialphysik

Schlagwörter

ASJC Scopus Sachgebiete

Electronic, Optical and Magnetic Materials, Mechanical Engineering, Materials Chemistry, Allgemeine Chemie, Electrical and Electronic Engineering

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/4c6b35c6-6dd0-4a7d-8a5f-0378fc546850