Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

Autor(en)

Dmitry Usachov, Oleg Vilkov, Alexander Grüneis, Danny Haberer, Alexander V. Fedorov, Vera K. Adamchuk, Alexei B. Preobrajenski, P Dudin, Alexei Barinov, Martin Oehzelt, Clemens Laubschat, D.V. Vyalikh

Abstrakt

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Saint Petersburg State University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Lund University, Elettra Sincrotrone Trieste, Helmholtz-Zentrum Berlin für Materialien und Energie, Technische Universität Dresden

Journal

Nano Letters: a journal dedicated to nanoscience and nanotechnology

Band

11

Seiten

5401-5407

Anzahl der Seiten

7

ISSN

1530-6984

DOI

https://doi.org/10.1021/nl2031037

Publikationsdatum

2011

Peer-reviewed

Ja

ÖFOS 2012

103015 Kondensierte Materie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/49480cb7-fbd2-448f-9271-4b251d0fa0b6