Die u:cris Detailansicht:

Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases

Autor(en)

Zhandong Chen, Qiang Wu, Ming Yang, Baiquan Tang, Jianghong Yao, Romano A. Rupp, Yaan Cao, Jingjun Xu

Abstrakt

Generation and evolution of plasma during femtosecond laser ablation of

silicon are studied by steady-state and time-resolved spectroscopy in

air, N₂, SF₆, and under vacuum. The plasma is

generated faster than 200 ps (time resolution of our experiment) after

excitation and mainly contains atoms and monovalent ions of silicon.

Time-resolved spectra prove that silicon ions are faster than the

silicon atoms which may be attributed to Coulomb repulsion and a local

electric field when they are ejected from the silicon surface. During

plasma evolution, ambient gas causes a confinement effect that enhances

the dissociation of ambient gas molecules and the re-deposition of the

removed material and leads to higher intensity and longer lifetime of

the emission spectra. In SF₆, a chemical reaction increases

the plasma density and weakens the re-deposition effect. The different

processes during plasma evolution strongly influence microstructure

formation.

Organisation(en)

Physik Funktioneller Materialien

Externe Organisation(en)

Nankai University

Journal

Laser and Particle Beams

Band

Seiten

539-545

Anzahl der Seiten

ISSN

0263-0346

DOI

https://doi.org/10.1017/S0263034613000281

Publikationsdatum

09-2013

Peer-reviewed

ÖFOS 2012

103021 Optik, 103009 Festkörperphysik, 103040 Photonik, 103018 Materialphysik

Schlagwörter

Link zum Portal