Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process

Autor(en)

M. V. Kharlamova

Abstrakt

A single-step method of filling the channels of single-walled carbon nanotubes with the melt of refractory GaSe is proposed and successfully implemented. The filled nanotubes are investigated by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It is found that charge transfer from the nanotube walls to embedded GaSe accompanied by lowering of the Fermi level in nanotubes occurs in the obtained nanocomposite; i.e., acceptor doping of nanotubes takes place.

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Lomonosov Moscow State University (MSU)

Journal

JETP Letters

Band

98

Seiten

272-277

Anzahl der Seiten

6

ISSN

0021-3640

DOI

https://doi.org/10.1134/S0021364013180069

Publikationsdatum

11-2013

Peer-reviewed

Ja

ÖFOS 2012

205017 Werkstofftechnik

Schlagwörter

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/1e8fd101-8ae6-4c25-89f2-5bbcd05449d7