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Novel approach to tailoring the electronic properties of single-walled carbon nanotubes by the encapsulation of high-melting gallium selenide using a single-step process

Autor(en)
M. V. Kharlamova
Abstrakt

A single-step method of filling the channels of single-walled carbon nanotubes with the melt of refractory GaSe is proposed and successfully implemented. The filled nanotubes are investigated by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It is found that charge transfer from the nanotube walls to embedded GaSe accompanied by lowering of the Fermi level in nanotubes occurs in the obtained nanocomposite; i.e., acceptor doping of nanotubes takes place.

Organisation(en)
Elektronische Materialeigenschaften
Externe Organisation(en)
Lomonosov Moscow State University (MSU)
Journal
JETP Letters
Band
98
Seiten
272-277
Anzahl der Seiten
6
ISSN
0021-3640
DOI
https://doi.org/10.1134/S0021364013180069
Publikationsdatum
11-2013
Peer-reviewed
Ja
ÖFOS 2012
205017 Werkstofftechnik
Schlagwörter
Link zum Portal
https://ucrisportal.univie.ac.at/de/publications/1e8fd101-8ae6-4c25-89f2-5bbcd05449d7