The Chemistry of Imperfections in N-Graphene

Autor(en)

Dmitry Usachov, Alexander Fedorov, Oleg Vilkov, Boris Senkovskiy, Vera K. Adamchuk, Lada V. Yashina, Andrey A. Volykhov, Mani Farjam, Nikolay I. Verbitskiy, Alexander Grueneis, Clemens Laubschat, Denis V. Vyalikh

Abstrakt

Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Saint Petersburg State University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Universität zu Köln, Technische Universität Dresden, Lomonosov Moscow State University (MSU), Institute for Research in Fundamental Sciences (IPM)

Journal

Nano Letters: a journal dedicated to nanoscience and nanotechnology

Band

14

Seiten

4982-4988

Anzahl der Seiten

7

ISSN

1530-6984

DOI

https://doi.org/10.1021/nl501389h

Publikationsdatum

09-2014

Peer-reviewed

Ja

ÖFOS 2012

103020 Oberflächenphysik, 103018 Materialphysik, 103009 Festkörperphysik

Schlagwörter

ASJC Scopus Sachgebiete

Condensed Matter Physics, Mechanical Engineering, Bioengineering, Allgemeine Chemie, Allgemeine Materialwissenschaften

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/109b4531-1c07-4f02-a73e-78f15b8be9be