Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

Autor(en)

Dmitry Usachov, Vera K. Adamchuk, Danny Haberer, Alexander Grüneis, Hermann Sachdev, Alexei B. Preobrajenski, Clemens Laubschat, D.V. Vyalikh

Abstrakt

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.

Organisation(en)

Elektronische Materialeigenschaften

Externe Organisation(en)

Saint Petersburg State University, Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Universität des Saarlandes, Lund University, Technische Universität Dresden

Journal

Physical Review B

Band

82

Anzahl der Seiten

6

ISSN

1098-0121

DOI

https://doi.org/10.1103/PhysRevB.82.075415

Publikationsdatum

2010

Peer-reviewed

Ja

ÖFOS 2012

103015 Kondensierte Materie

Link zum Portal

https://ucrisportal.univie.ac.at/de/publications/0f7eb9be-7abb-4471-9baf-6c6985fee1d7