Die u:cris Detailansicht:
Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO3:Zr,Cu,Ce
- Autor(en)
- Fucai Liu, Yong-Fa Kong, Xinyu Ge, Hongde Liu, Shi-Guo Liu, Shao-Lin Chen, Romano Rupp, Jing-Jun Xu
- Abstrakt
We have designed and grown triply doped LiNbO3:Zr,Cu,Ce crystal and investigated its characteristics of nonvolatile holographic storage. It's observed that the photorefractive sensitivity of LiNbO3:Zr,Cu,Ce has improved to 0.099 cm/J, which is about one order of magnitude larger than that of congruent LiNbO3:Cu,Ce. And LiNbO3:Zr,Cu,Ce also has high suppression to light-induced scattering. Our results indicated that triply doped LiNbO3:Zr,Cu,Ce is an excellent candidate for nonvolatile holographic data storage.
- Organisation(en)
- Physik Funktioneller Materialien
- Externe Organisation(en)
- Nankai University
- Journal
- Optics Express
- Band
- 18
- Seiten
- 6333-6339
- Anzahl der Seiten
- 7
- DOI
- https://doi.org/10.1364/OE.18.006333
- Publikationsdatum
- 2010
- Peer-reviewed
- Ja
- ÖFOS 2012
- 103018 Materialphysik
- Link zum Portal
- https://ucrisportal.univie.ac.at/de/publications/081d1e76-38f6-4e01-b757-31c03afc2ff7